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this is information on a product in full production. october 2012 doc id 18351 rev 5 1/16 16 STRH40N6 rad-hard n-channel 60 v, 30 a power mosfet datasheet ? production data features fast switching 100% avalanche tested hermetic package 70 krad tid see radiation hardened applications satellite high reliability description this n-channel power mosfet is developed with stmicroelectronics unique stripfet? process. it has specifically been designed to sustain high tid and provide immunity to heavy ion effects. figure 1. internal schematic diagram note: contact st sales office for information about the specific conditions for tape and reel, product in die form and other packages. v bdss i d r ds(on) q g 60 v 30 a 36 mohm 43 nc smd.5 table 1. device summary part numbers escc part number quality level package lead finish mass (g) temp. range eppl STRH40N6s1 - engineering model smd.5 gold 2 -55 to 150c - STRH40N6sg tbd escc flight target www.st.com
contents STRH40N6 2/16 doc id 18351 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STRH40N6 electrical ratings doc id 18351 rev 5 3/16 1 electrical ratings (t c = 25 c unless otherwise specified) table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-source voltage (v gs = 0) 60 v v gs (2) 2. this value is guaranteed over the full range of temperature. gate-source voltage 20 v i d (3) 3. rated according to the rthj-case + rthc-s drain current (continuous) at t c = 25c 30 a i d (3) drain current (continuous) at t c = 100c 19 a i dm (4) 4. pulse width limited by safe operating area drain current (pulsed) 120 a p tot (5) 5. rated according to the rthj-case total dissipation at t c = 25c 75 w p tot (3) total dissipation at t c = 25c 66 w dv/dt (6) 6. i sd 40 a, di/dt 1060 a/s, v dd = 80 %v (br)dss peak diode recovery voltage slope 2.5 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case 1.67 c/w rthc-s case-to-sink 0.21 c/w rthj-amb (1) 1. when mounted on heat sink of 300 mm2, t < 10 sec thermal resistance junction -amb 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 15 a e as (1) single pulse avalanche energy (starting tj= 25c, id= 20 a, vdd= 40 v) 354 mj e as single pulse avalanche energy (starting tj= 110 c, id= 20 a, vdd= 40 v) 105
electrical ratings STRH40N6 4/16 doc id 18351 rev 5 e ar repetitive avalanche (vdd = 50 v, i ar = 17.5 a, f = 10 khz, t j = 25 c, duty cycle = 50%) 20 mj repetitive avalanche (vdd = 40 v, i ar = 15 a, f = 100 khz, t j = 25 c, duty cycle = 10%) 1.3 repetitive avalanche (vdd = 40 v, i ar = 15 a, f = 100 khz, t j = 110 c, duty cycle = 10%) 0.4 1. maximum rating value. table 4. avalanche characteristics (continued) symbol parameter value unit
STRH40N6 electrical characteristics doc id 18351 rev 5 5/16 2 electrical characteristics (t c = 25 c unless otherwise specified). pre-irradiation table 5. pre-irradiation on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v -100 100 na bv dss (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-to-source breakdown voltage v gs = 0, i d = 1 ma 60 v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on resistance v gs = 12 v i d = 15 a 0.036 0.045 table 6. pre-irradiation dynamic symbol parameter test conditions min. typ. max. unit c iss c oss (1) c rss 1. this value is guaranteed over the full range of temperature. input capacitance output capacitance reverse transfer capacitance v gs = 0, v ds = 25 v, f=1mhz 1312 281 111 1640 351 139 1968 421 167 pf pf pf q g q gs q gd total gate charge gate-to-source charge gate-to-drain (?miller?) charge v dd = 30 v, i d = 40 a, v gs =12 v 35 9 12 43 11 15 52 13 18 nc nc nc r g (2) 2. not tested, guaranteed by process. gate input resistance f=1mhz gate dc bias=0 test signal level=20 mv open drain 1.04 1.3 1.56 table 7. pre-irradiation switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 30 v, i d = 20 a, r g = 4.7 , v gs = 12 v 13 26 18 7 17 59 33 11.5 21 92 48 16 ns ns ns ns
electrical characteristics STRH40N6 6/16 doc id 18351 rev 5 table 8. pre-irradiation source drain diode (1) 1. refer to the figure 16: source drain diode . symbol parameter test conditions min. typ. max unit i sd i sdm (2) 2. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 30 120 a a v sd (3) 3. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 30 a, v gs = 0 1.1 v t rr (4) q rr (4) i rrm (4) 4. not tested in production, guaranteed by process. reverse recovery time reverse recovery charge reverse recovery current i sd = 40 a, di/dt = 100 a/s v dd = 48 v, tj = 25 c 288 360 3.3 18.2 432 ns c a t rr (4) q rr (4) i rrm (4) reverse recovery time reverse recovery charge reverse recovery current i sd = 40 a, di/dt = 100 a/s v dd = 48 v, tj = 150 c 352 440 4.4 19.8 529 ns c a
STRH40N6 radiation characteristics doc id 18351 rev 5 7/16 3 radiation characteristics the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested for total ionizing dose (irradiation done according to the escc 22900 specification, window 1) using the to-3 package. both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (t amb = 22 3 c unless otherwise specified). total dose radiation (tid) testing one bias conditions using the to-3 package: ?v gs bias: + 15 v applied and v ds = 0 v during irradiation the following parameters are measured (see ta b l e 9 , ta bl e 1 0 and ta b l e 1 1 ): before irradiation after irradiation after 24 hrs @ room temperature after 168 hrs @ 100 c anneal table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +20 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v 1.5 -1.5 na bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma -20% v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma -60% / +20% v r ds(on) static drain-source on-resistance v gs = 10 v; i d = 20 a 10% table 10. dynamic post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values unit q g total gate charge i g = 1 ma, v gs = 12 v, v ds = 30 v, i ds = 20 a -5% / +50% nc q gs gate-source charge 35% q gd gate-drain charge -5% / +110%
radiation characteristics STRH40N6 8/16 doc id 18351 rev 5 single event effect, soa the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to heavy ion environment for single event effect (irradiation per mil-std-750e, method 1080 bias circuit in figure 3: single event effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occurs or if the fluence reaches 3e+5 ions/cm2. segr test: the gate current is monitored every 100 ms. a gate stress is performed before and after irradiation. stop condition: as soon as the gate current reaches 100 na (during irradiation or during pigs test) or if the fluence reaches 3e+5 ions/cm2. the results are: ? no seb ? segr test produces the following soa (see table 12: single event effect (see), safe operating area (soa) and figure 2: single event effect, soa ) table 11. source drain diode post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) (1) 1. refer to figure 16 . symbol parameter test conditions drift values .unit v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 5% v table 12. single event effect (see), safe operating area (soa) ion let (mev/(mg/cm 2 ) energy (mev) range (m) v ds (v) @v gs =0 @v gs = -2 v @v gs = -5 v @v gs = -10 v @v gs = -20 v kr 32 768 94 60 48 39 27 15
STRH40N6 radiation characteristics doc id 18351 rev 5 9/16 figure 2. single event effect, soa figure 3. single event effect, bias circuit (a) a. bias condition during radiation refer to table 12: single event effect (see), safe operating area (soa) . 6ds6dsmax 6gs6 +r-e6cmmg 2 2 # p& 5 6 gs # n& # ?& 6 ds !-v
electrical characteristics (curves) STRH40N6 10/16 doc id 18351 rev 5 4 electrical characteristics (curves) figure 4. safe operating area figure 5. thermal impedance figure 6. output characteristics figure 7. transfer characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations )d! 6ds6 ms ms ?s !-v $#operation i d 60 40 20 0 0 10 v d s (v) (a) 5 15 8 0 100 120 v g s =5v v g s =6v v g s =7v v g s = 8 v v g s =10v hv 33 010 i d 10 1 3 .5 v g s (v) (a) 4.5 5.5 6.5 100 tj= -55 c tj= +25 c tj= +150 c am07252v1 v g s 6 4 2 0 0 10 q g (nc) (v) 3 0 8 20 10 v dd = 3 0 v i g =1. 3 ma 40 50 i d =10 a i d =20 a i d =40 a 12 hv 33 020 c 100 10 0.1 10 v d s (v) (pf) 1 1000 ci ss co ss cr ss hv 33 0 3 0
STRH40N6 electrical characteristics (curves) doc id 18351 rev 5 11/16 figure 10. normalized bv dss vs temperature figure 11. static drain-source on-resistance figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature figure 14. source drain-diode forward characteristics
test circuits STRH40N6 12/16 doc id 18351 rev 5 5 test circuits figure 16. source drain diode figure 15. switching times test circuit for resistive load (1) 1. max driver v gs slope = 1v/ns (no dut) figure 17. unclamped inductive load test circuit (single pulse and repetitive) am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd t rr b a ;=of) 2- didt "odydiodereversecurrent) 2- ) &- bodydiodeforwardcurrent !-6 am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd
STRH40N6 package mechanical data doc id 18351 rev 5 13/16 6 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. figure 18. tsmd.5 drawing table 13. smd.5 mechanical data dim. mm inch min. typ. max. min. typ. max. a 2.84 3.00 3.15 0.112 0.118 0.124 a1 0.25 0.38 0.51 0.010 0.015 0.020 b 7.13 7.26 7.39 0.281 0.286 0.291 b1 5.58 5.72 5.84 0.220 0.225 0.230 b2 2.28 2.41 2.54 0.090 0.095 0.100 b3 2.92 3.05 3.18 0.115 0.120 0.125 d 10.03 10.16 10.28 0.935 0.400 0.405 d1 0.76 0.030 0.685 e 7.39 7.52 7.64 0.291 0.296 0.301 e 1.91 0.075
order codes STRH40N6 14/16 doc id 18351 rev 5 7 order codes contact st sales office for information about the specific conditions for tape and reel, product in die form and other packages. table 14. ordering information order codes escc part number quality level eppl package lead finish marking packing STRH40N6s1 - engineering model - smd-0.5 gold STRH40N6fsy1 +beo strip pack STRH40N6sg tbd escc flight target tbd
STRH40N6 revision history doc id 18351 rev 5 15/16 8 revision history table 15. document revision history date revision changes 03-jan-2011 1 first release. 25-aug-2011 2 updated order codes in table 1: device summary and ta bl e 1 4 : ordering information . minor text changes. 09-nov-2011 3 updated dynamic values on table 7: pre-irradiation switching times . document status changed from preliminary data to datasheet. 28-mar-2012 4 updated title in cover page. 03-oct-2012 5 figure 4: safe operating area has been modified.
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